Sputtered β-Ga <sub>2</sub>O <sub>3</sub> Crystallization by High Temperature Annealing on AlN/Si

Akira Sagawa

doi:https://doi.org/10.7567/SSDM.2023.M-1-04

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Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[M-1] Wide Bandgap Materials

Wed. Sep 6, 2023 2:00 PM - 3:30 PM Room M (431, Bldg. 4)

Session Chairs: Shingo Ogawa (Toray Research Center, Inc.), Takuya Hoshi (NTT Device Technology Lab.)

3:15 PM - 3:30 PM

[M-1-04] Sputtered β-Ga ₂O ₃ Crystallization by High Temperature Annealing on AlN/Si

^○Akira Sagawa¹, Norikazu Ito¹, Taketoshi Tanaka¹, Ken Nakahara¹ (1. ROHM Corp., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2023.M-1-04

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Presentation information

[M-1] Wide Bandgap Materials

[M-1-04] Sputtered β-Ga 2O 3 Crystallization by High Temperature Annealing on AlN/Si

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[M-1-04] Sputtered β-Ga ₂O ₃ Crystallization by High Temperature Annealing on AlN/Si