Si-Ge-Sn heterostructures grown by chemical vapor deposition for electronic and photonic devices

Omar Concepción

doi:https://doi.org/10.7567/SSDM.2023.M-3-01

9:00 AM - 9:30 AM

[M-3-01 (Invited)] Si-Ge-Sn heterostructures grown by chemical vapor deposition for electronic and photonic devices

Omar Concepción¹, Yuji Yamamoto², Giovanni Capellini², Mustafa El-Kurdi³, Qing-Tai Zhao¹, Dan Buca¹, ^○Detlev Grützmacher¹ (1. Forschungszentrum Julich (Germany), 2. IHP - Leibniz Institut für innovative Mikroelektronik (Germany), 3. C2N -CNRS -Université Paris Saclay (France))

https://doi.org/10.7567/SSDM.2023.M-3-01

GeSn epitaxy in an industry-compatible reduced-pressure chemical vapor deposition reactor is detailed. The method has been optimized for a standard process offering a high Sn concentration at a large process window. GeSn base heterostructures as required for low power MOSFETs and monolithically integrated laser sources on Si are presented.

2023 International Conference on Solid State Devices and Materials

[M-3-01 (Invited)] Si-Ge-Sn heterostructures grown by chemical vapor deposition for electronic and photonic devices