Si-Ge-Sn heterostructures grown by chemical vapor deposition for electronic and photonic devices

Omar Concepción

doi:https://doi.org/10.7567/SSDM.2023.M-3-01

9:00 AM - 9:30 AM

[M-3-01 (Invited)] Si-Ge-Sn heterostructures grown by chemical vapor deposition for electronic and photonic devices

Omar Concepción¹, Yuji Yamamoto², Giovanni Capellini², Mustafa El-Kurdi³, Qing-Tai Zhao¹, Dan Buca¹, ^○Detlev Grützmacher¹ (1. Forschungszentrum Julich (Germany), 2. IHP - Leibniz Institut für innovative Mikroelektronik (Germany), 3. C2N -CNRS -Université Paris Saclay (France))

https://doi.org/10.7567/SSDM.2023.M-3-01

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Presentation information

[M-3] Group IV Materials I

[M-3-01 (Invited)] Si-Ge-Sn heterostructures grown by chemical vapor deposition for electronic and photonic devices

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