Si Diffusion Control by Inserting SiO <sub>2</sub> Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase

Yunosuke Sano

doi:https://doi.org/10.7567/SSDM.2023.M-7-03

講演情報

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[M-7] Advanced Materials, Nanofabrication, and Thin Films III

2023年9月8日(金) 13:30 〜 15:15 Room M (431, Bldg. 4)

Session Chairs: Akihiko Kikuchi (Sophia Univ.), Kentaro Watanabe (Shinshu Univ.)

14:00 〜 14:15

[M-7-03] Si Diffusion Control by Inserting SiO ₂ Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase

^○Yunosuke Sano¹, Wataru Yasuda¹, Noriyuki Taoka², Akio Ohta³, Katsunori Makihara¹, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Aichi Inst. of Tech. (Japan), 3. Fukuoka Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.M-7-03

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講演情報

[M-7] Advanced Materials, Nanofabrication, and Thin Films III

[M-7-03] Si Diffusion Control by Inserting SiO 2 Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase

パスワード

[M-7-03] Si Diffusion Control by Inserting SiO ₂ Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase