Si Diffusion Control by Inserting SiO <sub>2</sub> Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase

Yunosuke Sano

doi:https://doi.org/10.7567/SSDM.2023.M-7-03

Presentation information

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[M-7] Advanced Materials, Nanofabrication, and Thin Films III

Fri. Sep 8, 2023 1:30 PM - 3:15 PM Room M (431, Bldg. 4)

Session Chairs: Akihiko Kikuchi (Sophia Univ.), Kentaro Watanabe (Shinshu Univ.)

2:00 PM - 2:15 PM

[M-7-03] Si Diffusion Control by Inserting SiO ₂ Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase

^○Yunosuke Sano¹, Wataru Yasuda¹, Noriyuki Taoka², Akio Ohta³, Katsunori Makihara¹, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Aichi Inst. of Tech. (Japan), 3. Fukuoka Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.M-7-03

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Presentation information

[M-7] Advanced Materials, Nanofabrication, and Thin Films III

[M-7-03] Si Diffusion Control by Inserting SiO 2 Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase

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[M-7-03] Si Diffusion Control by Inserting SiO ₂ Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase