Low-voltage operation of floating-gate type nonvolatile memory utilizing N-doped LaB 6 metal and LaB xN y insulator stacked structure

Eun-Ki Hong

doi:https://doi.org/10.7567/SSDM.2023.M-7-05

Presentation information

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[M-7] Advanced Materials, Nanofabrication, and Thin Films III

Fri. Sep 8, 2023 1:30 PM - 3:15 PM Room M (431, Bldg. 4)

Session Chairs: Akihiko Kikuchi (Sophia Univ.), Kentaro Watanabe (Shinshu Univ.)

2:30 PM - 2:45 PM

[M-7-05] Low-voltage operation of floating-gate type nonvolatile memory utilizing N-doped LaB ₆ metal and LaB _xN _yinsulator stacked structure

^○Eun-Ki Hong¹, Shun-ichiro Ohmi¹, Secrytary Ohmi¹ (1. Tokyo Institute of Tech. (Japan))

https://doi.org/10.7567/SSDM.2023.M-7-05

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Presentation information

[M-7] Advanced Materials, Nanofabrication, and Thin Films III

[M-7-05] Low-voltage operation of floating-gate type nonvolatile memory utilizing N-doped LaB 6 metal and LaB xN y insulator stacked structure

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[M-7-05] Low-voltage operation of floating-gate type nonvolatile memory utilizing N-doped LaB ₆ metal and LaB _xN _yinsulator stacked structure