2:00 PM - 2:30 PM
[N-1-01 (Invited)] Vertical GaN devices - Performance and Availability
Recent developmental advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a point that the present Si-based power devices cannot handle. The requirements include higher blocking voltages, switching frequencies, efficiency, and reliability. To overcome these limitations, new semiconductor materials for power device applications are needed. For high power requirements, wide bandgap semiconductors with their superior electrical properties, are likely candidates to replace Si soon. Vertical GaN devices have voltage range and performance to effect changed in power electronics. This paper reviews recent progress and presents the key performance metrics for vertical GaN transistors and their availability.