Supression of Threshold Voltage Instability due to Positive Bias Stress in GaN Planer MOSFETs by Post-Deposition Anneal

Yuki Ichikawa

doi:https://doi.org/10.7567/SSDM.2023.N-1-03

講演情報

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-1] GaN-based Power Devices

2023年9月6日(水) 14:00 〜 15:30 Room N (432, Bldg. 4)

Session Chairs: Toru Sugiyama (Toshiba Device & Strage Corporation), Heiji Watanabe (Osaka Univ.)

14:45 〜 15:00

[N-1-03] Supression of Threshold Voltage Instability due to Positive Bias Stress in GaN Planer MOSFETs by Post-Deposition Anneal

^○Yuki Ichikawa¹, Katsunori Ueno², Tsurugi Kondo², Ryo Tanaka², Shinya Takashima², Jun Suda¹ (1. Univ. of Nagoya (Japan), 2. Corp. of Fuji Electric (Japan))

https://doi.org/10.7567/SSDM.2023.N-1-03

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講演情報

[N-1] GaN-based Power Devices

[N-1-03] Supression of Threshold Voltage Instability due to Positive Bias Stress in GaN Planer MOSFETs by Post-Deposition Anneal

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