GaN Vertical p-n Junction Diode on GaN Substrate Grown by Na-Flux Method with Avalanche Capability and Demonstration of 100 A (pulsed) Operation

Seiya Kawasaki

doi:https://doi.org/10.7567/SSDM.2023.N-1-04

3:00 PM - 3:15 PM

[N-1-04] GaN Vertical p-n Junction Diode on GaN Substrate Grown by Na-Flux Method with Avalanche Capability and Demonstration of 100 A (pulsed) Operation

^○Seiya Kawasaki¹, Hirotaka Watanabe¹, Kentaro Nonaka², Tomohiko Sugiyama², Yoshitaka Kuraoka², Shugo Nitta¹, Atsushi Tanaka¹, Yoshio Honda¹, Hiroshi Amano¹ (1. Nagoya Univ. (Japan), 2. NGK Insulators, Ltd. (Japan))

https://doi.org/10.7567/SSDM.2023.N-1-04

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[N-1] GaN-based Power Devices

[N-1-04] GaN Vertical p-n Junction Diode on GaN Substrate Grown by Na-Flux Method with Avalanche Capability and Demonstration of 100 A (pulsed) Operation

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