Impact of O <sub>2</sub> annealing on Chemical States of Mg doped GaN(0001) Surface

Zijun Zhou

doi:https://doi.org/10.7567/SSDM.2023.N-1-05

講演情報

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-1] GaN-based Power Devices

2023年9月6日(水) 14:00 〜 15:30 Room N (432, Bldg. 4)

Session Chairs: Toru Sugiyama (Toshiba Device & Strage Corporation), Heiji Watanabe (Osaka Univ.)

15:15 〜 15:30

[N-1-05] Impact of O ₂ annealing on Chemical States of Mg doped GaN(0001) Surface

^○Zijun Zhou¹, Akio Ohta², Xiaoyu Tian¹, Noriyuki Taoka³, Katsunori Makihara¹, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Fukuoka Univ. (Japan), 3. Aichi Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2023.N-1-05

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講演情報

[N-1] GaN-based Power Devices

[N-1-05] Impact of O 2 annealing on Chemical States of Mg doped GaN(0001) Surface

パスワード

[N-1-05] Impact of O ₂ annealing on Chemical States of Mg doped GaN(0001) Surface