Silicon carbide (SiC) is widely used in power semiconductor devices, but basal plane dislocations (BPDs) cause device performance degradation known as bipolar degradation. Recently we have proposed that proton implantation shows promise in suppressing BPD expansion by reducing BPD mobility. We have considered three potential mechanisms: hydrogen presence around BPDs, point defects induced by implantation, and carrier lifetime reduction. In this paper, we discuss the mechanisms of proton implantation and its availability for SiC power device production.