2023 International Conference on Solid State Devices and Materials

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Oral Presentation

04: Power / High‐speed Devices and Materials

[N-2] SiC Processes and Characterizations

Wed. Sep 6, 2023 4:00 PM - 5:30 PM Room N (432, Bldg. 4)

Session Chairs: Shinsuke Harada (National Institute of Advanced Industrial Science and Technology), Tomoya Ono (Kobe Univ.)

4:30 PM - 4:45 PM

[N-2-02] Intrinsic carrier density in 4H-SiC obtained from diffusion current in bipolar junction transistor

Satoshi Asada1, ○Koichi Murata1, Hajime Tanaka2, Hidekazu Tsuchida1 (1. CRIEPI (Japan), 2. Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.N-2-02

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