2023 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-2] SiC Processes and Characterizations

Wed. Sep 6, 2023 4:00 PM - 5:30 PM Room N (432, Bldg. 4)

Session Chairs: Shinsuke Harada (National Institute of Advanced Industrial Science and Technology), Tomoya Ono (Kobe Univ.)

4:30 PM - 4:45 PM

[N-2-02] Intrinsic carrier density in 4H-SiC obtained from diffusion current in bipolar junction transistor

Satoshi Asada1, Koichi Murata1, Hajime Tanaka2, Hidekazu Tsuchida1 (1. CRIEPI (Japan), 2. Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.N-2-02

Abstract password authentication.
PA password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

Password