Intrinsic carrier density in 4H-SiC obtained from diffusion current in bipolar junction transistor

Satoshi Asada

doi:https://doi.org/10.7567/SSDM.2023.N-2-02

講演情報

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-2] SiC Processes and Characterizations

2023年9月6日(水) 16:00 〜 17:30 Room N (432, Bldg. 4)

Session Chairs: Shinsuke Harada (National Institute of Advanced Industrial Science and Technology), Tomoya Ono (Kobe Univ.)

16:30 〜 16:45

[N-2-02] Intrinsic carrier density in 4H-SiC obtained from diffusion current in bipolar junction transistor

Satoshi Asada¹, ^○Koichi Murata¹, Hajime Tanaka², Hidekazu Tsuchida¹ (1. CRIEPI (Japan), 2. Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.N-2-02

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講演情報

[N-2] SiC Processes and Characterizations

[N-2-02] Intrinsic carrier density in 4H-SiC obtained from diffusion current in bipolar junction transistor

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