Analysis of Tunneling Effects in 4H-SiC Schottky Barrier Diodes Based on Complex Band Structure Considering Barrier Potential

Yutoku Murakami

doi:https://doi.org/10.7567/SSDM.2023.N-2-04

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Oral Presentation

04: Power / High‐speed Devices and Materials

[N-2] SiC Processes and Characterizations

Wed. Sep 6, 2023 4:00 PM - 5:30 PM Room N (432, Bldg. 4)

Session Chairs: Shinsuke Harada (National Institute of Advanced Industrial Science and Technology), Tomoya Ono (Kobe Univ.)

5:00 PM - 5:15 PM

[N-2-04] Analysis of Tunneling Effects in 4H-SiC Schottky Barrier Diodes Based on Complex Band Structure Considering Barrier Potential

^○Yutoku Murakami¹, Sachika Nagamizo¹, Hajime Tanaka¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.N-2-04

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Presentation information

[N-2] SiC Processes and Characterizations

[N-2-04] Analysis of Tunneling Effects in 4H-SiC Schottky Barrier Diodes Based on Complex Band Structure Considering Barrier Potential

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