2023 International Conference on Solid State Devices and Materials

講演情報

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-2] SiC Processes and Characterizations

2023年9月6日(水) 16:00 〜 17:30 Room N (432, Bldg. 4)

Session Chairs: Shinsuke Harada (National Institute of Advanced Industrial Science and Technology), Tomoya Ono (Kobe Univ.)

17:00 〜 17:15

[N-2-04] Analysis of Tunneling Effects in 4H-SiC Schottky Barrier Diodes Based on Complex Band Structure Considering Barrier Potential

Yutoku Murakami1, Sachika Nagamizo1, Hajime Tanaka1, Nobuya Mori1 (1. Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.N-2-04

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