2023 International Conference on Solid State Devices and Materials

Presentation information

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-2] SiC Processes and Characterizations

Wed. Sep 6, 2023 4:00 PM - 5:30 PM Room N (432, Bldg. 4)

Session Chairs: Shinsuke Harada (National Institute of Advanced Industrial Science and Technology), Tomoya Ono (Kobe Univ.)

5:15 PM - 5:30 PM

[N-2-05 (Late News)] Atomic and Electronic Structures of Basal Plane Dislocations (BPDs) in 4H-SiC -Atomistic Origin of Bipolar Degradation of SiC Devices-

Masaki Sano1, Jun Kojima2, Shoichi Onda2, Takashi Yoda3, Takayuki Ohba3, Kenji Shiraishi1,2 (1. Graduate School of Engineering, Nagoya University (Japan), 2. Institute of Materials and Systems for Sustainability (Japan), 3. WOW Alliance, Tokyo Institute of Technology (Japan))

https://doi.org/10.7567/SSDM.2023.N-2-05

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