Atomic and Electronic Structures of Basal Plane Dislocations (BPDs) in 4H-SiC -Atomistic Origin of Bipolar Degradation of SiC Devices-

Masaki Sano

doi:https://doi.org/10.7567/SSDM.2023.N-2-05

17:15 〜 17:30

[N-2-05 (Late News)] Atomic and Electronic Structures of Basal Plane Dislocations (BPDs) in 4H-SiC -Atomistic Origin of Bipolar Degradation of SiC Devices-

^○Masaki Sano¹, Jun Kojima², Shoichi Onda², Takashi Yoda³, Takayuki Ohba³, Kenji Shiraishi^1,2 (1. Graduate School of Engineering, Nagoya University (Japan), 2. Institute of Materials and Systems for Sustainability (Japan), 3. WOW Alliance, Tokyo Institute of Technology (Japan))

https://doi.org/10.7567/SSDM.2023.N-2-05

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講演情報

[N-2] SiC Processes and Characterizations

[N-2-05 (Late News)] Atomic and Electronic Structures of Basal Plane Dislocations (BPDs) in 4H-SiC -Atomistic Origin of Bipolar Degradation of SiC Devices-

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