Recess Ohmic contact to AlGaN/GaN heterostructure using single or hybrid electrode structures

Kazuya Uryu

doi:https://doi.org/10.7567/SSDM.2023.N-3-04

講演情報

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-3] High-speed and Advanced Technologies

2023年9月7日(木) 09:00 〜 10:15 Room N (432, Bldg. 4)

Session Chairs: Taketomo Sato (Hokkaido Univ.), Akira Satou (Tohoku Univ.)

10:00 〜 10:15

[N-3-04] Recess Ohmic contact to AlGaN/GaN heterostructure using single or hybrid electrode structures

^○Kazuya Uryu^1,2, Yuchen Deng¹, Toshi-kazu Suzuki¹ (1. Japan Advanced Inst. of Sci. and Tech. (Japan), 2. Advantest Lab. Ltd. (Japan))

https://doi.org/10.7567/SSDM.2023.N-3-04

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講演情報

[N-3] High-speed and Advanced Technologies

[N-3-04] Recess Ohmic contact to AlGaN/GaN heterostructure using single or hybrid electrode structures

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