10:45 AM - 11:15 AM
[N-6-01 (Invited)] High-mobility p-channel field-effect transistors based on hydrogen-terminated diamond/h-BN heterostructures
I will present the development of high-mobility wide-bandgap p-channel field-effect transistors (FETs) based on van der Waals heterostructures consisting of hydrogen-terminated diamond and hexagonal boron nitride (h-BN). The Hall mobility reaches 680 cm-2V-1s-1, which is one of the highest among p-channel FETs made of diamond and other wide bandgap semiconductors. The FETs also exhibit normally OFF behavior. Surface transfer doping has been thought to be necessary for hydrogen-terminated diamond FETs, but our results indicate that it is unnecessary and reducing the density of surface acceptors improves the device performance.