High-mobility p-channel field-effect transistors based on hydrogen-terminated diamond/h-BN heterostructures

Takahide Yamaguchi

doi:https://doi.org/10.7567/SSDM.2023.N-6-01

講演情報

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-6] Diamond-based Devices

2023年9月8日(金) 10:45 〜 11:45 Room N (432, Bldg. 4)

Session Chairs: Satoshi Yamasaki (Kanazawa Univ.), Shinsuke Harada (National Institute of Advanced Industrial Science and Technology)

10:45 〜 11:15

[N-6-01 (Invited)] High-mobility p-channel field-effect transistors based on hydrogen-terminated diamond/h-BN heterostructures

^○Takahide Yamaguchi¹ (1. NIMS (Japan))

https://doi.org/10.7567/SSDM.2023.N-6-01

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講演情報

[N-6] Diamond-based Devices

[N-6-01 (Invited)] High-mobility p-channel field-effect transistors based on hydrogen-terminated diamond/h-BN heterostructures

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