Normally-Off Operation in Vertical Diamond MOSFETs Using Oxidized Si Termination Diamond Channel Formed by Si Molecular Beam Deposition Approaches

Kento Narita

doi:https://doi.org/10.7567/SSDM.2023.N-6-02

11:15 〜 11:30

[N-6-02] Normally-Off Operation in Vertical Diamond MOSFETs Using Oxidized Si Termination Diamond Channel Formed by Si Molecular Beam Deposition Approaches

^○Kento Narita¹, Kosuke Ota¹, Yu Fu¹, Chiyuki Wakabayashi¹, Atushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1. School of Fundamental Science & Engineering Waseda Univ. (Japan), 2. The Kagami Memorial Research Inst. for Materials Science and Technology (Japan))

https://doi.org/10.7567/SSDM.2023.N-6-02

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講演情報

[N-6] Diamond-based Devices

[N-6-02] Normally-Off Operation in Vertical Diamond MOSFETs Using Oxidized Si Termination Diamond Channel Formed by Si Molecular Beam Deposition Approaches

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