Radiation Effects on 2DHG Diamond MOSFETs with Boron-doped Source and Drain Layers

Xuezhen Jia

doi:https://doi.org/10.7567/SSDM.2023.N-6-03

11:30 〜 11:45

[N-6-03] Radiation Effects on 2DHG Diamond MOSFETs with Boron-doped Source and Drain Layers

^○Xuezhen Jia¹, Yukiko Suzuki¹, Sukeyasu Deguchi², Fuga Asai¹, Akira Takahashi¹, Atsushi Hiraiwa¹, Junichi Kaneko², Hiroshi Kawarada^1,3 (1. School of Fundamental Science and Engineering Waseda Univ. (Japan), 2. School of Engineering Hokkaido Univ. (Japan), 3. Kagami Memorial Reasearch Inst. for Materials Science and Technology, Waseda Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.N-6-03

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講演情報

[N-6] Diamond-based Devices

[N-6-03] Radiation Effects on 2DHG Diamond MOSFETs with Boron-doped Source and Drain Layers

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