1:30 PM - 2:00 PM
[N-7-01 (Invited)] Recent Progress towards high-performance lateral Ga2O3 FETs
β-Ga2O3 has seen rampant research interest throughout the last decade due to its promise as a next generation semiconductor. It has a rare combination of intrinsic material properties which create an opportunity for low loss power devices. This abstract will cover the development of the Ga2O3 supply chain in the US from bulk development through device demonstrations.
