Trap Analysis of Normally-off Ga <sub>2</sub>O <sub>3</sub> MOSFET Enabled by Charge Trapping Layer Using Photon Stimulated Characterization

Minghao He

doi:https://doi.org/10.7567/SSDM.2023.N-7-02

Presentation information

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-7] Ga2O3-based Devices

Fri. Sep 8, 2023 1:30 PM - 3:00 PM Room N (432, Bldg. 4)

Session Chairs: Yongzhao Yao (Japan Fine Ceramics Center), Joel T. Asubar (Univ. of Fukui)

2:00 PM - 2:15 PM

[N-7-02] Trap Analysis of Normally-off Ga ₂O ₃ MOSFET Enabled by Charge Trapping Layer Using Photon Stimulated Characterization

^○Minghao He^1,2, Mujun Li², Xiaohui Wang², Qing Wang², Hongyu Yu², Kah-Wee Ang¹ (1. National Univ. of Singapore (Singapore), 2. Southern Univ. of Sci. and Tech. (China))

https://doi.org/10.7567/SSDM.2023.N-7-02

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Presentation information

[N-7] Ga2O3-based Devices

[N-7-02] Trap Analysis of Normally-off Ga 2O 3 MOSFET Enabled by Charge Trapping Layer Using Photon Stimulated Characterization

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[N-7-02] Trap Analysis of Normally-off Ga ₂O ₃ MOSFET Enabled by Charge Trapping Layer Using Photon Stimulated Characterization