2023 International Conference on Solid State Devices and Materials

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Oral Presentation

04: Power / High‐speed Devices and Materials

[N-7] Ga2O3-based Devices

Fri. Sep 8, 2023 1:30 PM - 3:00 PM Room N (432, Bldg. 4)

Session Chairs: Yongzhao Yao (Japan Fine Ceramics Center), Joel T. Asubar (Univ. of Fukui)

2:30 PM - 2:45 PM

[N-7-04] A Simulation Study of Vertical Ga 2O 3 Schottky Barrier Diodes Using Field Plate Termination

○Yohei Yuda1, Kohei Ebihara1, Takuma Nanjo1, Masayuki Furuhashi1, Tatsuro Watahiki1, Kazuyasu Nishikawa1 (1. Mitsubishi Electric Corp. (Japan))

https://doi.org/10.7567/SSDM.2023.N-7-04

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