2023 International Conference on Solid State Devices and Materials

講演情報

印刷

Oral Presentation

04: Power / High‐speed Devices and Materials

[N-7] Ga2O3-based Devices

2023年9月8日(金) 13:30 〜 15:00 Room N (432, Bldg. 4)

Session Chairs: Yongzhao Yao (Japan Fine Ceramics Center), Joel T. Asubar (Univ. of Fukui)

14:30 〜 14:45

[N-7-04] A Simulation Study of Vertical Ga 2O 3 Schottky Barrier Diodes Using Field Plate Termination

○Yohei Yuda1, Kohei Ebihara1, Takuma Nanjo1, Masayuki Furuhashi1, Tatsuro Watahiki1, Kazuyasu Nishikawa1 (1. Mitsubishi Electric Corp. (Japan))

https://doi.org/10.7567/SSDM.2023.N-7-04

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