Theoretical Investigation of β-(Al xGa 1- x) 2O 3/Ga 2O 3 Modulation-Doped Field-Effect Transistors with Dual-Metal Gate Structure

Xiaole Jia

doi:https://doi.org/10.7567/SSDM.2023.N-7-05

2:45 PM - 3:00 PM

[N-7-05] Theoretical Investigation of β-(Al _xGa _1- _x) ₂O ₃/Ga ₂O ₃ Modulation-Doped Field-Effect Transistors with Dual-Metal Gate Structure

^○Xiaole Jia¹, Yibo Wang^1,2, Cizhe Fang¹, Yan Liu¹, Yue Hao¹, Genquan Han¹ (1. Xidian University (China), 2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China))

https://doi.org/10.7567/SSDM.2023.N-7-05

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Presentation information

[N-7] Ga2O3-based Devices

[N-7-05] Theoretical Investigation of β-(Al _xGa _1- _x) ₂O ₃/Ga ₂O ₃ Modulation-Doped Field-Effect Transistors with Dual-Metal Gate Structure

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Presentation information

[N-7] Ga2O3-based Devices

[N-7-05] Theoretical Investigation of β-(Al xGa 1- x) 2O 3/Ga 2O 3 Modulation-Doped Field-Effect Transistors with Dual-Metal Gate Structure

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[N-7-05] Theoretical Investigation of β-(Al _xGa _1- _x) ₂O ₃/Ga ₂O ₃ Modulation-Doped Field-Effect Transistors with Dual-Metal Gate Structure