2023 International Conference on Solid State Devices and Materials

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Poster Session

01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[PS-1] 01: Advanced CMOS: Material Science / Process Engineering / Device Technology

2023年9月7日(木) 15:00 〜 17:00 Shirotori Hall (Nagoya Congress Center)

[PS-1-03] Effects of HfO2 and ZrO2 Seed Layers on the Transition from Antiferroelectric (AFE) to Ferroelectric (FE) of Rich Zr Composition HfO2-based Film

○Peilin Zeng1, Yue Peng1, Wenwu Xiao2, Yan Liu1, Genquan Han1,3, Yue Hao1 (1. Wide Bandgap Semiconductor Technology Disciplines State Key aboratory,School of Microelectronics.Xidian University (China), 2. Xi’an UnilC Semiconductors CompanyLtd. (China), 3. Hangzhou Institute of Technology.Xidian University, Hangzhou (China))

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