Engineering Oxidation State in Interfacial Layer of Ge nMOSFET with Ozone and Hydrogen Plasma Treatments on Ge

Cheng-Hsueh Wu

doi:https://doi.org/10.7567/SSDM.2023.PS-1-12

講演情報

Poster Session

01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[PS-1] 01: Advanced CMOS: Material Science / Process Engineering / Device Technology

2023年9月7日(木) 15:00 〜 17:00 Shirotori Hall (Nagoya Congress Center)

[PS-1-12] Engineering Oxidation State in Interfacial Layer of Ge nMOSFET with Ozone and Hydrogen Plasma Treatments on Ge

^○Cheng-Hsueh Wu¹, Kuei-Shu Chang-Liao¹, Dun-Bao Ruan² (1. National Tsing Hua University (Taiwan), 2. Fuzhou University (China))

https://doi.org/10.7567/SSDM.2023.PS-1-12

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講演情報

[PS-1] 01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[PS-1-12] Engineering Oxidation State in Interfacial Layer of Ge nMOSFET with Ozone and Hydrogen Plasma Treatments on Ge

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