Ferroelectric properties of 50 nm size BaTiO<sub>3</sub> /polysiloxane nanocomposites processed by low temperature solution method

ChuanJun Wu

doi:https://doi.org/10.7567/SSDM.2023.PS-10-02

講演情報

Poster Session

10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[PS-10] 10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

2023年9月7日(木) 15:00 〜 17:00 Shirotori Hall (Nagoya Congress Center)

[PS-10-02] Ferroelectric properties of 50 nm size BaTiO₃ /polysiloxane nanocomposites processed by low temperature solution method

^○ChuanJun Wu¹, Juan Paolo Bermundo¹, Aimi Syairah Safaruddin¹, Atsuko Yamamoto², Yukiharu Uraoka¹ (1.NARA Inst. of Sci. and Tech. (Japan), 2. Merck Electronics Ltd. (Japan))

https://doi.org/10.7567/SSDM.2023.PS-10-02

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講演情報

[PS-10] 10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[PS-10-02] Ferroelectric properties of 50 nm size BaTiO3 /polysiloxane nanocomposites processed by low temperature solution method

パスワード

[PS-10-02] Ferroelectric properties of 50 nm size BaTiO₃ /polysiloxane nanocomposites processed by low temperature solution method