Effect of Bilayer High-kAl2O3 and HfO2 Gate Insulators on the Electrical Performance of Amorphous Oxide Thin-Film Transistors

Dian Budiarti Kastian

doi:https://doi.org/10.7567/SSDM.2023.PS-10-04

Presentation information

Poster Session

10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[PS-10] 10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

Thu. Sep 7, 2023 3:00 PM - 5:00 PM Shirotori Hall (Nagoya Congress Center)

[PS-10-04] Effect of Bilayer High-kAl₂O₃ and HfO₂ Gate Insulators on the Electrical Performance of Amorphous Oxide Thin-Film Transistors

^○Dian Budiarti Kastian¹, Juan Paolo Bermundo¹, Yukiharu Uraoka¹ (1. Nara Inst. of Sci. and Tech. (Japan))

https://doi.org/10.7567/SSDM.2023.PS-10-04

Abstract password authentication.
PA password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

Presentation information

[PS-10] 10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[PS-10-04] Effect of Bilayer High-kAl2O3 and HfO2 Gate Insulators on the Electrical Performance of Amorphous Oxide Thin-Film Transistors

Password

[PS-10-04] Effect of Bilayer High-kAl₂O₃ and HfO₂ Gate Insulators on the Electrical Performance of Amorphous Oxide Thin-Film Transistors