Effect of Bilayer High-kAl2O3 and HfO2 Gate Insulators on the Electrical Performance of Amorphous Oxide Thin-Film Transistors

Dian Budiarti Kastian

doi:https://doi.org/10.7567/SSDM.2023.PS-10-04

講演情報

Poster Session

10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[PS-10] 10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

2023年9月7日(木) 15:00 〜 17:00 Shirotori Hall (Nagoya Congress Center)

[PS-10-04] Effect of Bilayer High-kAl₂O₃ and HfO₂ Gate Insulators on the Electrical Performance of Amorphous Oxide Thin-Film Transistors

^○Dian Budiarti Kastian¹, Juan Paolo Bermundo¹, Yukiharu Uraoka¹ (1. Nara Inst. of Sci. and Tech. (Japan))

https://doi.org/10.7567/SSDM.2023.PS-10-04

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講演情報

[PS-10] 10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[PS-10-04] Effect of Bilayer High-kAl2O3 and HfO2 Gate Insulators on the Electrical Performance of Amorphous Oxide Thin-Film Transistors

パスワード

[PS-10-04] Effect of Bilayer High-kAl₂O₃ and HfO₂ Gate Insulators on the Electrical Performance of Amorphous Oxide Thin-Film Transistors