High Electrical Performance with Superior Bias Stabilities for an Oxide Thin-Film Transistor with Solution-Processed Ultra-Thin Semiconductor

Jun-Hyeong Park

doi:https://doi.org/10.7567/SSDM.2023.PS-10-08

[PS-10-08] High Electrical Performance with Superior Bias Stabilities for an Oxide Thin-Film Transistor with Solution-Processed Ultra-Thin Semiconductor

^○Jun-Hyeong Park¹, Do-Kyung Kim¹, Jin-Hyuk Bae^1,2 (1. School of Electronic and Electrical Engineering, Kyungpook National Univ. (Korea), 2. School of Electronics Engineering, Kyungpook National Univ. (Korea))

https://doi.org/10.7567/SSDM.2023.PS-10-08

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講演情報

[PS-10] 10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[PS-10-08] High Electrical Performance with Superior Bias Stabilities for an Oxide Thin-Film Transistor with Solution-Processed Ultra-Thin Semiconductor

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