Formation of Micron-Thick Ge by Trench-Filling Epitaxy Using a Patterned (001) Si Substrate with a <100>-Oriented Trench Array

Takumi Maeda

doi:https://doi.org/10.7567/SSDM.2023.PS-11-07

講演情報

Poster Session

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[PS-11] 11: Advanced Materials: Synthesis / Crystal Growth / Characterization

2023年9月7日(木) 15:00 〜 17:00 Shirotori Hall (Nagoya Congress Center)

[PS-11-07] Formation of Micron-Thick Ge by Trench-Filling Epitaxy Using a Patterned (001) Si Substrate with a <100>-Oriented Trench Array

^○Takumi Maeda¹, Kota Kato¹, Jose A. Piedra-Lorenzana¹, Takeshi Hizawa¹, Tetsuya Nakai², Yasuhiko Ishikawa¹ (1. Toyohashi Univ. of Tech. (Japan), 2. SUMCO Corp. (Japan))

https://doi.org/10.7567/SSDM.2023.PS-11-07

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講演情報

[PS-11] 11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[PS-11-07] Formation of Micron-Thick Ge by Trench-Filling Epitaxy Using a Patterned (001) Si Substrate with a <100>-Oriented Trench Array

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