First Principles Studies on Mg Impurity Incorporation into GaN during MOVPE Growth

Takashi Kuroda

doi:https://doi.org/10.7567/SSDM.2023.PS-11-11

[PS-11-11] First Principles Studies on Mg Impurity Incorporation into GaN during MOVPE Growth

^○Takashi Kuroda¹, Lisa Mizuno², Shuto Hattori³, Kenji Shiraishi^3,4 (1. Gifu Highschool (Japan), 2. Nanzan Highschool (Japan), 3. Graduate School of Engineering, Nagoya Univ. (Japan), 4. Institue of Materials and Sytemss for Sustainability, Nagoya Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.PS-11-11

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Presentation information

[PS-11] 11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[PS-11-11] First Principles Studies on Mg Impurity Incorporation into GaN during MOVPE Growth

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