The Effect of V/III Ratio on the Morphology and Structure of the Homo-epitaxial GaN Growth on Bulk GaN Substrates by Radical Enhanced Metal-Organic Chemical Vapor Deposition (REMOCVD)

ARUN KUMAR DHASIYAN

doi:https://doi.org/10.7567/SSDM.2023.PS-11-19

[PS-11-19 (Late News)] The Effect of V/III Ratio on the Morphology and Structure of the Homo-epitaxial GaN Growth on Bulk GaN Substrates by Radical Enhanced Metal-Organic Chemical Vapor Deposition (REMOCVD)

^○ARUN KUMAR DHASIYAN¹, Swathy Jayaprasad¹, Frank Wilson Amalraj¹, Naohiro Shimizu¹, Osamu Oda¹, Kenji Ishikawa ¹, Masaru Hori¹ (1. Center for Low-temperature Plasma Sciences, Nagoya University (Japan))

https://doi.org/10.7567/SSDM.2023.PS-11-19

Abstract password authentication.
PA password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

Presentation information

[PS-11] 11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[PS-11-19 (Late News)] The Effect of V/III Ratio on the Morphology and Structure of the Homo-epitaxial GaN Growth on Bulk GaN Substrates by Radical Enhanced Metal-Organic Chemical Vapor Deposition (REMOCVD)

Password