The Effect of V/III Ratio on the Morphology and Structure of the Homo-epitaxial GaN Growth on Bulk GaN Substrates by Radical Enhanced Metal-Organic Chemical Vapor Deposition (REMOCVD)

ARUN KUMAR DHASIYAN

doi:https://doi.org/10.7567/SSDM.2023.PS-11-19

[PS-11-19 (Late News)] The Effect of V/III Ratio on the Morphology and Structure of the Homo-epitaxial GaN Growth on Bulk GaN Substrates by Radical Enhanced Metal-Organic Chemical Vapor Deposition (REMOCVD)

^○ARUN KUMAR DHASIYAN¹, Swathy Jayaprasad¹, Frank Wilson Amalraj¹, Naohiro Shimizu¹, Osamu Oda¹, Kenji Ishikawa ¹, Masaru Hori¹ (1. Center for Low-temperature Plasma Sciences, Nagoya University (Japan))

https://doi.org/10.7567/SSDM.2023.PS-11-19

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講演情報

[PS-11] 11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[PS-11-19 (Late News)] The Effect of V/III Ratio on the Morphology and Structure of the Homo-epitaxial GaN Growth on Bulk GaN Substrates by Radical Enhanced Metal-Organic Chemical Vapor Deposition (REMOCVD)

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