Remnant Polarization Enhancement in Ferroelectric HfO<sub>2</sub> Thin Films Induced by Mechanical Uniaxial Tensile Strain during Polarization Switching

Tatsuya Inoue

doi:https://doi.org/10.7567/SSDM.2023.PS-2-04

[PS-2-04] Remnant Polarization Enhancement in Ferroelectric HfO₂ Thin Films Induced by Mechanical Uniaxial Tensile Strain during Polarization Switching

^○Tatsuya Inoue¹, Takashi Onaya², Koji Kita^1,2 (1. Dept. of Materials Engineering, The Univ. of Tokyo (Japan), 2. Dept. of Advanced Materials Science, The Univ. of Tokyo (Japan))

https://doi.org/10.7567/SSDM.2023.PS-2-04

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Presentation information

[PS-2] 02: Advanced and Emerging Memories / New Applications

[PS-2-04] Remnant Polarization Enhancement in Ferroelectric HfO₂ Thin Films Induced by Mechanical Uniaxial Tensile Strain during Polarization Switching

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Presentation information

[PS-2] 02: Advanced and Emerging Memories / New Applications

[PS-2-04] Remnant Polarization Enhancement in Ferroelectric HfO2 Thin Films Induced by Mechanical Uniaxial Tensile Strain during Polarization Switching

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[PS-2-04] Remnant Polarization Enhancement in Ferroelectric HfO₂ Thin Films Induced by Mechanical Uniaxial Tensile Strain during Polarization Switching