Improved Stable Memory Window of the Germanium Ferroelectric Field-Effect Transistor with ZrO2-HfO2-ZrO2 Superlattice Gate Dielectric

Kaixuan Li

[PS-2-05] Improved Stable Memory Window of the Germanium Ferroelectric Field-Effect Transistor with ZrO₂-HfO₂-ZrO₂ Superlattice Gate Dielectric

Kaixuan Li¹, Yue Peng¹, wenwu xiao^2,1, Yan Liu¹, Genquan Han¹, Yue Hao¹ (1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University (China), 2. Xi’an UniIC Semiconductors Company Ltd. (China))

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Presentation information

[PS-2] 02: Advanced and Emerging Memories / New Applications

[PS-2-05] Improved Stable Memory Window of the Germanium Ferroelectric Field-Effect Transistor with ZrO₂-HfO₂-ZrO₂ Superlattice Gate Dielectric

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Presentation information

[PS-2] 02: Advanced and Emerging Memories / New Applications

[PS-2-05] Improved Stable Memory Window of the Germanium Ferroelectric Field-Effect Transistor with ZrO2-HfO2-ZrO2 Superlattice Gate Dielectric

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[PS-2-05] Improved Stable Memory Window of the Germanium Ferroelectric Field-Effect Transistor with ZrO₂-HfO₂-ZrO₂ Superlattice Gate Dielectric