The Study of Trap Evolution by Gate Leakage Current in Hf0.5Zr0.5O2 FeFET During Endurance Fatigue

Fengbin - Tian

doi:https://doi.org/10.7567/SSDM.2023.PS-2-08

[PS-2-08] The Study of Trap Evolution by Gate Leakage Current in Hf_0.5Zr_0.5O₂ FeFET During Endurance Fatigue

^○Fengbin - Tian¹, Xiaoqing - Sun¹, Shuangshuang - Xu¹, Songwei - Li¹, Junshuai - Chai¹, Hao - Xu¹, Xiaolei - Wang¹, Wenwu - Wang² (1. Institute of Microelectronics of the Chinese Academy of Sciences (China), 2. Bureau of Major R&D Program Chinese Academy of Sciences (China))

https://doi.org/10.7567/SSDM.2023.PS-2-08

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講演情報

[PS-2] 02: Advanced and Emerging Memories / New Applications

[PS-2-08] The Study of Trap Evolution by Gate Leakage Current in Hf_0.5Zr_0.5O₂ FeFET During Endurance Fatigue

パスワード

講演情報

[PS-2] 02: Advanced and Emerging Memories / New Applications

[PS-2-08] The Study of Trap Evolution by Gate Leakage Current in Hf0.5Zr0.5O2 FeFET During Endurance Fatigue

パスワード

[PS-2-08] The Study of Trap Evolution by Gate Leakage Current in Hf_0.5Zr_0.5O₂ FeFET During Endurance Fatigue