Finite element analysis of oxygen vacancy behavior in four-terminal TiO<sub>2-x</sub> memristive devices

Yuki Koizumi

doi:https://doi.org/10.7567/SSDM.2023.PS-2-13

講演情報

Poster Session

02: Advanced and Emerging Memories / New Applications

[PS-2] 02: Advanced and Emerging Memories / New Applications

2023年9月7日(木) 15:00 〜 17:00 Shirotori Hall (Nagoya Congress Center)

[PS-2-13] Finite element analysis of oxygen vacancy behavior in four-terminal TiO_2-x memristive devices

^○Yuki Koizumi¹, Ryotaro Miyake¹, Yusuke Hayashi¹, Tetsuya Tohei¹, Akira Sakai¹ (1. Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.PS-2-13

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講演情報

[PS-2] 02: Advanced and Emerging Memories / New Applications

[PS-2-13] Finite element analysis of oxygen vacancy behavior in four-terminal TiO2-x memristive devices

パスワード

[PS-2-13] Finite element analysis of oxygen vacancy behavior in four-terminal TiO_2-x memristive devices