Capacitorless DRAM Based on Polycrystalline-Silicon with a Separated Channel Layer and a Fin-Shaped Storage Layer

Seung Ji Bae

doi:https://doi.org/10.7567/SSDM.2023.PS-2-18

[PS-2-18] Capacitorless DRAM Based on Polycrystalline-Silicon with a Separated Channel Layer and a Fin-Shaped Storage Layer

^○Seung Ji Bae¹, Sang Ho Lee¹, Jin Park¹, Ga Eon Kang¹, Jun Hyeok Heo¹, So Ra Jeon¹, Min Seok Kim¹, Jeong Woo Hong¹, Jaewon Jang¹, Jin-Hyuk Bae¹, Sin-Hyung Lee¹, In Man Kang¹ (1. Kyungpook National Univ. (Korea))

https://doi.org/10.7567/SSDM.2023.PS-2-18

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Presentation information

[PS-2] 02: Advanced and Emerging Memories / New Applications

[PS-2-18] Capacitorless DRAM Based on Polycrystalline-Silicon with a Separated Channel Layer and a Fin-Shaped Storage Layer

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