Effect of Geometrical Variations on Bulk FinFET-Based Capacitorless DRAM

Min Seok Kim

doi:https://doi.org/10.7567/SSDM.2023.PS-2-19

[PS-2-19] Effect of Geometrical Variations on Bulk FinFET-Based Capacitorless DRAM

^○Min Seok Kim¹, Sang Ho Lee¹, Jin Park¹, Ga Eon Kang¹, Jun Hyeok Heo¹, So Ra Jeon¹, Jeong Woo Hong¹, Seung Ji Bae¹, In Man Kang¹ (1. Kyungpook National Univ. (Korea))

https://doi.org/10.7567/SSDM.2023.PS-2-19

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講演情報

[PS-2] 02: Advanced and Emerging Memories / New Applications

[PS-2-19] Effect of Geometrical Variations on Bulk FinFET-Based Capacitorless DRAM

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