High-Speed Operation at 25ns Enabled by Angstrom Layer HZO Technology in MFS IGZO Device with Ultra-Wide Memory Window and Low Thermal Budget

CHENG- RUI LIU

doi:https://doi.org/10.7567/SSDM.2023.PS-2-21

[PS-2-21] High-Speed Operation at 25ns Enabled by Angstrom Layer HZO Technology in MFS IGZO Device with Ultra-Wide Memory Window and Low Thermal Budget

^○CHENG- RUI LIU¹, SHENG-MIN WANG¹, YU-TING CHEN¹, SHAO-CHEN LEE¹, YING-TSAN TANG¹ (1. National Central Univ. (Taiwan))

https://doi.org/10.7567/SSDM.2023.PS-2-21

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Presentation information

[PS-2] 02: Advanced and Emerging Memories / New Applications

[PS-2-21] High-Speed Operation at 25ns Enabled by Angstrom Layer HZO Technology in MFS IGZO Device with Ultra-Wide Memory Window and Low Thermal Budget

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