Turn-Off Switching Voltage Surge Analysis with Dependence on IGBT Cell Design

Yuri Fujimoto

doi:https://doi.org/10.7567/SSDM.2023.PS-4-01

講演情報

Poster Session

04: Power / High‐speed Devices and Materials

[PS-4] 04: Power / High‐speed Devices and Materials

2023年9月7日(木) 15:00 〜 17:00 Shirotori Hall (Nagoya Congress Center)

[PS-4-01] Turn-Off Switching Voltage Surge Analysis with Dependence on IGBT Cell Design

Yuri Fujimoto¹, Shin-ichi Nishizawa¹, ^○Wataru Saito¹ (1.Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.PS-4-01

Abstract password authentication.
A password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

講演情報

[PS-4] 04: Power / High‐speed Devices and Materials

[PS-4-01] Turn-Off Switching Voltage Surge Analysis with Dependence on IGBT Cell Design

パスワード