Recombination coefficients for 3C- and 6H-SiC to analyze carrier recombination at stacking faults in 4H-SiC

Kazuhiro “-” TANAKA

doi:https://doi.org/10.7567/SSDM.2023.PS-4-04

[PS-4-04] Recombination coefficients for 3C- and 6H-SiC to analyze carrier recombination at stacking faults in 4H-SiC

^○Kazuhiro “-” TANAKA¹, Masashi “-” KATO¹ (1. Nagoya Institute Technology (Japan))

https://doi.org/10.7567/SSDM.2023.PS-4-04

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講演情報

[PS-4] 04: Power / High‐speed Devices and Materials

[PS-4-04] Recombination coefficients for 3C- and 6H-SiC to analyze carrier recombination at stacking faults in 4H-SiC

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