First-Principles Study for Orientation Dependence of Band Alignments at 4H-SiC/SiO<sub>2</sub> Interface

Shun - Matsuda

doi:https://doi.org/10.7567/SSDM.2023.PS-4-05

[PS-4-05] First-Principles Study for Orientation Dependence of Band Alignments at 4H-SiC/SiO₂ Interface

^○Shun - Matsuda¹, Toru - Akiyama¹, Tetsuo - Hatakeyama², Kenji - Shiraishi³, Takashi - Nakayama⁴ (1. Mie Univ. (Japan), 2. Toyama Pref. Univ. (Japan), 3. Nagoya Univ. (Japan), 4. Chiba Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.PS-4-05

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[PS-4] 04: Power / High‐speed Devices and Materials

[PS-4-05] First-Principles Study for Orientation Dependence of Band Alignments at 4H-SiC/SiO₂ Interface

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Presentation information

[PS-4] 04: Power / High‐speed Devices and Materials

[PS-4-05] First-Principles Study for Orientation Dependence of Band Alignments at 4H-SiC/SiO2 Interface

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[PS-4-05] First-Principles Study for Orientation Dependence of Band Alignments at 4H-SiC/SiO₂ Interface