Wannier-Stark Localization of Electronic States in 4H-SiC MOS Inversion Layer

Sachika Nagamizo

doi:https://doi.org/10.7567/SSDM.2023.PS-4-06

講演情報

Poster Session

04: Power / High‐speed Devices and Materials

[PS-4] 04: Power / High‐speed Devices and Materials

2023年9月7日(木) 15:00 〜 17:00 Shirotori Hall (Nagoya Congress Center)

[PS-4-06] Wannier-Stark Localization of Electronic States in 4H-SiC MOS Inversion Layer

^○Sachika Nagamizo¹, Hajime Tanaka¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.PS-4-06

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講演情報

[PS-4] 04: Power / High‐speed Devices and Materials

[PS-4-06] Wannier-Stark Localization of Electronic States in 4H-SiC MOS Inversion Layer

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