First-principles calculation for SiC/SiO<sub>2</sub> interface atomic structure after NO annealing

Mizuho Ohmoto

doi:https://doi.org/10.7567/SSDM.2023.PS-4-07

講演情報

Poster Session

04: Power / High‐speed Devices and Materials

[PS-4] 04: Power / High‐speed Devices and Materials

2023年9月7日(木) 15:00 〜 17:00 Shirotori Hall (Nagoya Congress Center)

[PS-4-07] First-principles calculation for SiC/SiO₂ interface atomic structure after NO annealing

^○Mizuho Ohmoto¹, Naoki Komatsu¹, Mitsuharu Uemoto¹, Tomoya Ono¹ (1. Univ. of Kobe (Japan))

https://doi.org/10.7567/SSDM.2023.PS-4-07

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講演情報

[PS-4] 04: Power / High‐speed Devices and Materials

[PS-4-07] First-principles calculation for SiC/SiO2 interface atomic structure after NO annealing

パスワード

[PS-4-07] First-principles calculation for SiC/SiO₂ interface atomic structure after NO annealing